unisonic technologies co., ltd 5n60k-mt power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2015 unisonic technologies co., ltd qw-r205-038.b 5a, 600v n-channel power mosfet ? description the utc 5n60k-mt is a high voltage power mosfet and is designed to have better characteri stics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. this power mosfet is usually used at high speed switching applications in power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) < 2.2 ? @ v gs =10v, i d = 2.5a * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 5n60kl-tf3-t 5N60KG-TF3-T to-220f g d s tube 5n60kl-tf1-t 5n60kg-tf1-t to-220f1 g d s tube 5n60kl-tf2-t 5n60kg-tf2-t to-220f2 g d s tube 5n60kl-tf3t-t 5n60kg-tf3t-t to-220f3 g d s tube 5n60kl-tm3-t 5n60kg-tm3-t to-251 g d s tube 5n60kl-tms-t 5n60kg-tms-t to-251s g d s tube 5n60kl-tn3-r 5n60kg-tn3-r to-252 g d s tape reel 5n60kl-tnd-r 5n60kg-tnd-r to-252d g d s tape reel note: pin assignment: g: gate d: drain s: source
5n60k-mt power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r205-038.b ? marking
5n60k-mt power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r205-038.b ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v continuous drain current i d 5 a pulsed drain current (note 2) i dm 20 a avalanche energy single pulsed (note 3) e as 220 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns to-220f/to-220f1 to-220f3 36 w to-220f2 38 w power dissipation to-251/to-251s to-252/to-252d p d 54 w junction temperature t j +150 c operation temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by t j(max) 3. l = 17.6mh, i as = 5a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 5a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit to-220f/to-220f1/ to-220f2/to-220f3 62.5 c/w junction to ambient to-251/to-251s to-252/to-252d ja 160 c/w to-220f/to-220f1 to-220f3 3.47 c/w to-220f2 3.28 c/w junction to case to-251/to-251s to-252/to-252d jc 2.30 c/w
5n60k-mt power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r205-038.b ? electrical characteristics (t c = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d = 250 a 600 v drain-source leakage current i dss v ds =600v, v gs = 0v 1 a forward v gs =30v, v ds = 0v 100 gate-source leakage current reverse i gss v gs =-30v, v ds = 0v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 0.6 v/c on characteristics gate threshold voltage v gs(th) v ds =v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d = 2.5a 1.5 2.2 ? dynamic characteristics input capacitance c iss 460 620 pf output capacitance c oss 70 90 pf reverse transfer capacitance c rss v ds = 25v, v gs = 0v, f = 1.0mhz 8 12 pf switching characteristics turn-on delay time t d(on) 50 ns turn-on rise time t r 60 ns turn-off delay time t d(off) 120 ns turn-off fall time t f v dd =30v, i d =0.5a, r g =25 ? (note 1, 2) 35 ns total gate charge q g 18 nc gate-source charge q gs 6.7 nc gate-drain charge q gd v ds =50v, i d =1.3a, v gs =10v (note 1, 2) 4.5 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0 v, i s = 5a 1.4 v maximum continuous drain-source diode forward current i s 5 a maximum pulsed drain-source diode forward current i sm 20 a note: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
5n60k-mt power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r205-038.b ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period peak diode recovery dv/dt waveforms
5n60k-mt power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r205-038.b ? test circuits and waveforms (cont.) switching test circuit switching waveforms gate charge test circuit gate charge waveform unclamped inductive switching test circuit unclamped inductive switching waveforms
5n60k-mt power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r205-038.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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